Thank you for writing to us. One of our executive will reach back to you through your submitted medium. In case there’s an urgency, feel free to connect over WhatsApp for faster response.
Prefer calling? Dial +9108048038626 (international callers) or 08048038626 (Indian callers).
N-Channel MOSFET
Applications:
• Adaptor
• LCD Panel Power
Features:
• Lead Free
• Low ON Resistance
• Low Gate Charge
• Low Crss(typical 13pF)
• Improved dv/dt capability
Ordering Information
ITP07N80A ITA07N80A
VDSS RDS(ON) (Max.) ID
800V 1.6 : 7.0A
D
G
D G
S S
TO-220
Not to Scale
Absolute Maximum Ratings TC=25 oC unless otherwise specified
TO-220F
Not to Scale S
Symbol Parameter ITP07N80A ITA07N80A Units
VDSS Drain-to-Source Voltage (NOTE *1) 800 V
ID Continuous Drain Current 7.0 7.0*
A
ID@ 100 oC Continuous Drain Current Figure 3
IDM Pulsed Drain Current, VGS@ 10V (NOTE *2) Figure 6
PD Power Dissipation 150 40 W
Derating Factor above 25 oC 1.2 0.32 W/ oC
VGS Gate-to-Source Voltage ± 30 V
EAS Single Pulse Avalanche Engergy L=10 mH 130 mJ
IAS Pulsed Avalanche Rating Figure 8
dv/dt Peak Diode Recovery dv/dt (NOTE *3) 5.0 V/ns
TL TPKG Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10 seconds Package Body for 10 seconds
300
260
oC
TJ and TSTG Operating Junction and Storage Temperature Range -55 to 150
*Drain Current limited by Maximum Junction Temperature.
Caution: Stresses greater than those listed in the “Absolute Maximum Ratings” Table may cause permanent damage to the device.
Thermal Resistance
Symbol Parameter ITP07N80A ITA07N80A Units Test Conditions
RTJC Junction-to-Case 0.83 3.125
o C/W Water cooled heatsink, PD adjusted for a peak junction temperature of +150 oC.
RTJA Junction-to-Ambient 62 100 1 cubic foot chamber, free air.
InPower Semiconductor Co., Ltd
