IRFBG30 – 1000V 3.1 A N-Channel Power Mosfet – TO-220 Package
Third-generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. Tags, IRFBG30, IRFBG30PBF, 844-IRFBG30.
Features/Specs:
Manufacturer Part No: IRFBG30
Manufacturer: Vishay Semiconductors
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Drain-Source Breakdown Voltage: 1 kV
Continuous Drain Current: 3.1A
Drain-Source Resistance: 5 Ohms
Gate-Source Voltage: -20V ~ +20V
Gate-Source Threshold Voltage: 4V
Gate Charge: 80 nC
Operating Temperature: – 55°C ~ +150°C
Power Dissipation: 125 W
Channel Mode: Enhancement
Series: IRFBG
Configuration: Single
Fall Time: 29 ns
Rise Time: 25 ns
Typical Turn-Off Delay Time: 89 ns
Typical Turn-On Delay Time: 12 ns
Mounting Style: Through Hole
Package/Case: TO-220AB-3
