Description

IRFZ44N Power MOSFET IRFZ44N is an advanced HEXFET® Power MOSFETs which utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. Features of IRFZ44N Power MOSFET Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Maximum Ratings of IRFZ44N Power MOSFET Continuous Drain Current: 49 A Pulsed Drain Current: 160 A Power Dissipation: 94 watt