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15SQ045 – 45V 15A Schottky Diode – R-6 Axial Package Diode 45 V 15A Through Hole R-6. These devices employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art

2024-09-28T04:43:43

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20SQ045 – 45V 20A Schottky Diode – R-6 Axial Package Diode 45 V 20A Through Hole R-6. These devices employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art

2024-09-28T04:44:52

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10SQ045 – 45V 10A Schottky Diode – R-6 Axial Package Diode 45 V 10A Through Hole R-6. These devices employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art

2024-09-28T04:41:36

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IRFZ44NPbF - Infineon Technologies  Advanced Process Technology  Ultra Low On-Resistance  Dynamic dv/dt Rating  175°C Operating Temperature  Fast Switching  Fully Avalanche Rated  Lead-Free

2018-12-19T14:18:35

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Hycon Three Phase Silicon Power Diode

2019-03-27T16:11:54

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Hycon Three Phase Silicon Power Diode

2019-03-27T16:11:38

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WALSIN Multilayer capacitor 0603B472K500CT SMD Multilayer Ceramic Capacitors MLCC, 0603 Series, General Purpose, Lead-Free, EU RoHS, 0603, 4.7nF, 50V, X7R, ± 10% Capacitance Error MOON • WALSIN Multi

2019-02-01T05:57:31

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Silicon Power Diode

2019-03-27T16:13:32

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