Description

IRFP2907 Automotive MOSFET Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this IRFP2907 power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. Features of IRFP2907 Automotive MOSFET Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Power Dissipation(PD @TC = 25°C) 470 W Linear Derating Factor 3.1 W/°C Gate-to-Source Voltage(VGS) ± 20 V Applications IRFP2907 Automotive MOSFET Integrated Starter Alternator 42 Volts Automotive Electrical Systems