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2N60 2 Ampere 600Volts N-Channel POWER MOSFET The 2N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance an

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10SQ045 – 45V 10A Schottky Diode – R-6 Axial Package Diode 45 V 10A Through Hole R-6. These devices employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art

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20SQ045 – 45V 20A Schottky Diode – R-6 Axial Package Diode 45 V 20A Through Hole R-6. These devices employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art

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15SQ045 – 45V 15A Schottky Diode – R-6 Axial Package Diode 45 V 15A Through Hole R-6. These devices employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art

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MUR420 – 200V 4A Ultrafast Rectifier Diode – DO-201AD Package The MUR460 is a single-phase ultrafast Power Diode with lead-free pure tin-plated lead and a molded plastic case. olderable terminals as p

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MUR420 – 200V 4A Ultrafast Rectifier Diode – DO-201AD Package The MUR460 is a single-phase ultrafast Power Diode with lead-free pure tin-plated lead and a molded plastic case. olderable terminals as p

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MUR460 Ultrafast Rectifier Diode- DO-201AD The MUR460 is a single-phase ultrafast Power Diode with lead-free pure tin-plated lead and a molded plastic case. Solderable terminals as per MIL-STD-202, m

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MUR460 Ultrafast Rectifier Diode- DO-201AD The MUR460 is a single-phase ultrafast Power Diode with lead-free pure tin-plated lead and a molded plastic case. Solderable terminals as per MIL-STD-202, m

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