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MS51FB9AE – 8051 8-Bit Microcontroller IC – 20-TSSOP Package The MS51FB9AE / MS51XB9AE / MS51XB9BE provides rich peripherals including 256 Bytes of SRAM, 1K Bytes of auxiliary RAM (XRAM), Up to 18 ge

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HEL-10D471K 470V 190pF MOV Varistor Through Hole The Hongzhi Metal Oxide Varistors or MOV are voltage dependent, nonlinear device that provides excellent transient voltage suppression. The Metal Oxid

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HEL-7D511K 510V 80pF MOV Varistor Through Hole The Hongzhi Metal Oxide Varistors or MOV are voltage dependent, nonlinear device that provides excellent transient voltage suppression. The Metal Oxide

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HEL-10D821K 820V 130pF MOV Varistor Through Hole The Hongzhi Metal Oxide Varistors or MOV are voltage dependent, nonlinear device that provides excellent transient voltage suppression. The Metal Oxid

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HEL-10D431K 430V 220pF MOV Varistor Through Hole The Hongzhi Metal Oxide Varistors or MOV are voltage dependent, nonlinear device that provides excellent transient voltage suppression. The Metal Oxid

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HEL-7D561K 560V 75pF MOV Varistor Through Hole The Hongzhi Metal Oxide Varistors or MOV are voltage dependent, nonlinear device that provides excellent transient voltage suppression. The Metal Oxide

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HEL-10D561K 560V 180pF MOV Varistor Through Hole The Hongzhi Metal Oxide Varistors or MOV are voltage dependent, nonlinear device that provides excellent transient voltage suppression. The Metal Oxid

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HEL-10D681K 680V 140pF MOV Varistor Through Hole The Hongzhi Metal Oxide Varistors or MOV are voltage dependent, nonlinear device that provides excellent transient voltage suppression. The Metal Oxid

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