The Wayon WMJ26N65C4 is a high-performance power MOSFET designed for efficient power switching in industrial and electronic applications. This component features a robust TO-247 package, ensuring reliable thermal management and electrical performance for power supply and converter circuits.
Wayon WMJ26N65C4 Power MOSFET Transistor
Key Specifications
Parameter
Value
Transistor Type
N-Channel MOSFET
Drain-Source Voltage (VDS)
650 V
Continuous Drain Current (ID)
18 A
Drain-Source On Resistance (RDS(on))
0.19 Ω (Max.)
Gate-Source Voltage (VGS)
±30 V
Power Dissipation (PD)
135 W
Junction Temperature
-55°C to +150°C
Gate Threshold Voltage
Typ. 3 V
Package
TO-247
Features
650V Super Junction MOSFET
Low RDS(on) for high efficiency
Low gate charge for fast switching
High avalanche capability
RoHS compliant
Suitable for high-frequency switching applications
Applications
SMPS (Switch Mode Power Supplies)
Solar Inverters
UPS Systems
Industrial Power Supplies
Motor Drives
LED Drivers
Battery Chargers
PFC Circuits
