The Wayon WMJ26N65C4 is a high-performance power MOSFET designed for efficient power switching in industrial and electronic applications. This component features a robust TO-247 package, ensuring reliable thermal management and electrical performance for power supply and converter circuits. Wayon WMJ26N65C4 Power MOSFET Transistor Key Specifications Parameter Value Transistor Type N-Channel MOSFET Drain-Source Voltage (VDS) 650 V Continuous Drain Current (ID) 18 A Drain-Source On Resistance (RDS(on)) 0.19 Ω (Max.) Gate-Source Voltage (VGS) ±30 V Power Dissipation (PD) 135 W Junction Temperature -55°C to +150°C Gate Threshold Voltage Typ. 3 V Package TO-247 Features 650V Super Junction MOSFET Low RDS(on) for high efficiency Low gate charge for fast switching High avalanche capability RoHS compliant Suitable for high-frequency switching applications Applications SMPS (Switch Mode Power Supplies) Solar Inverters UPS Systems Industrial Power Supplies Motor Drives LED Drivers Battery Chargers PFC Circuits