Manufacturer: STARPOWER Semiconductor Part Number: GD35PJY120L3S Key Features • Module Type: Intelligent Power Module (PIM) • IGBT Technology: Advanced Trench Field-Stop • Collector-Emitter Voltage (VCES): 1200 V • Continuous Collector Current: o 70 A @ Tc = 25°C o 35 A @ Tc = 100°C • Pulsed Collector Current: 70 A • Gate-Emitter Voltage (VGES): ±20 V • Collector-Emitter Saturation Voltage (VCE(sat)): Typical 1.7 V • Power Dissipation: 301 W • Maximum Junction Temperature: 175°C • Isolation Voltage: 2500 VAC (1 minute) • Package: L3.0 Isolated Module • Mounting: Screw Mount with PCB Solder Pins Internal Configuration • Three-phase diode bridge rectifier • Three-phase IGBT inverter bridge • Brake IGBT + Brake diode • Built-in NTC temperature sensor Typical Applications • AC Motor Drives • VFD (Variable Frequency Drives) • Servo Drives • UPS Systems • Industrial Inverters • Power Supplies Features • Low VCE(sat) for reduced power loss • Fast & soft recovery freewheeling diodes • 10 µs short-circuit capability • DBC insulated baseplate • Low inductance package for high reliability