Manufacturer: STARPOWER Semiconductor
Part Number: GD35PJY120L3S
Key Features
• Module Type: Intelligent Power Module (PIM)
• IGBT Technology: Advanced Trench Field-Stop
• Collector-Emitter Voltage (VCES): 1200 V
• Continuous Collector Current:
o 70 A @ Tc = 25°C
o 35 A @ Tc = 100°C
• Pulsed Collector Current: 70 A
• Gate-Emitter Voltage (VGES): ±20 V
• Collector-Emitter Saturation Voltage (VCE(sat)): Typical 1.7 V
• Power Dissipation: 301 W
• Maximum Junction Temperature: 175°C
• Isolation Voltage: 2500 VAC (1 minute)
• Package: L3.0 Isolated Module
• Mounting: Screw Mount with PCB Solder Pins
Internal Configuration
• Three-phase diode bridge rectifier
• Three-phase IGBT inverter bridge
• Brake IGBT + Brake diode
• Built-in NTC temperature sensor
Typical Applications
• AC Motor Drives
• VFD (Variable Frequency Drives)
• Servo Drives
• UPS Systems
• Industrial Inverters
• Power Supplies
Features
• Low VCE(sat) for reduced power loss
• Fast & soft recovery freewheeling diodes
• 10 µs short-circuit capability
• DBC insulated baseplate
• Low inductance package for high reliability
