IRFBG30 – 1000V 3.1 A N-Channel Power Mosfet – TO-220 Package Third-generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. Tags, IRFBG30, IRFBG30PBF, 844-IRFBG30. Features/Specs: Manufacturer Part No: IRFBG30 Manufacturer: Vishay Semiconductors Transistor Polarity: N-Channel Number of Channels: 1 Channel Drain-Source Breakdown Voltage: 1 kV Continuous Drain Current: 3.1A Drain-Source Resistance: 5 Ohms Gate-Source Voltage: -20V ~ +20V Gate-Source Threshold Voltage: 4V Gate Charge: 80 nC Operating Temperature: – 55°C ~ +150°C Power Dissipation: 125 W Channel Mode: Enhancement Series: IRFBG Configuration: Single Fall Time: 29 ns Rise Time: 25 ns Typical Turn-Off Delay Time: 89 ns Typical Turn-On Delay Time: 12 ns Mounting Style: Through Hole Package/Case: TO-220AB-3