Description

STP80NF55-08 Power MOSFET This Power MOSFET is the latest development of STMicroelectronics unique “single feature size” strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. Features of STP80NF55-08 MOSFET Standard threshold drive VDS Drain-source voltage (VGS = 0) 55V VGS Gate- source voltage ±20V ID Drain current (continuos) at TC = 25 °C 80A ID Drain current (continuos) at TC = 100 °C 80A IDM Drain current (pulsed) 320A PTOT Total dissipation at TC = 25 °C 300W Derating factor 2 W/°C Operating junction temperature -55 to 175°C Storage temperature -55 to 175°C