Description

P80NF55 Power MOSFET P80NF55 Power MOSFET is the latest development of STMicroelectronics unique “single feature size” strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. Features of P80NF55 Power MOSFET Standard threshold drive VDS Drain-source voltage (VGS = 0) 55 V VGS Gate- source voltage ±20 V ID Drain current (continuos) at TC = 25 °C 80 A ID Drain current (continuos) at TC = 100 °C 80 A IDM Drain current (pulsed) 320 A PTOT Total dissipation at TC = 25 °C 300 W Derating factor 2 W/°C Tj Operating junction temperature Tstg Storage temperature -55 to 175 °C Application of P80NF55 Power MOSFET Switching applications