Description

IRFB4110PbF Power MOSFET Features of IRFB4110PbF Power MOSFET Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche SOA Enhanced body diode dV/dt and dI/dt Capability Lead Free RoHS Compliant, Halogen-Free ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 180 A ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 130 A ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 120 A IDM Pulsed Drain Current 670 A PD @TC = 25°C Maximum Power Dissipation 370 W Linear Derating Factor 2.5 W/°C VGS Gate-to-Source Voltage -+20 V dv/dt Peak Diode Recovery 5.3 V/ns Applications of IRFB4110PbF Power MOSFET High Efficiency Synchronous Rectification inc Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits