Description

IRFB3077 Power MOSFET Features of IRFB3077 MOSFET Worldwide Best RDS(on) in TO-220 Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Fully Characterized Capacitance and Avalanche SOA Enhanced body diode dV/dt and dI/dt Capability Continuous Drain Current ID @ TC = 25°C VGS @ 10V 210A Continuous Drain Current ID @ TC = 100°C VGS @ 10V 150A IDM Pulsed Drain Current 885A Power Dissipation PD @TC = 25°C 370 W Linear Derating Factor 2.5 W/°C VGS Gate-to-Source Voltage ± 20 V Peak Diode Recovery dv/dt 2.5 V/ns TJ Operating Junction and -55 to + 175 oC TSTG Storage Temperature Range -55 to + 175 oC Applications of IRFB3077 MOSFET High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits