Description

IRF9530N Power MOSFET Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The IRFP9530 MOSFET comes in TO-220 Package. TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. Features of IRF9530N Power MOSFET Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated ID @ TC = 25°C Continuous Drain Current, VGS @ -10V -14 A ID @ TC = 100°C Continuous Drain Current, VGS @ -10V -10 A IDM Pulsed Drain Current  -56 A PD @TC = 25°C Power Dissipation 79 W Linear Derating Factor 0.53 W/°C VGS Gate-to-Source Voltage ± 20 V EAS Single Pulse Avalanche Energy? 250 mJ IAR Avalanche Current -8.4 A EAR Repetitive Avalanche Energy 7.9 mJ dv/dt Peak Diode Recovery dv/dt ? -5.0 V/ns