Description

IRF540 MOSFET N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Features of IRF540 MOSFET Drain-Source Volt (Vds): 100V Gate-Source Volt (Vgs): 20V Drain-Gate Volt (Vdg): 100V Drain Current (Id): 30A Power Dissipation (Ptot): 150W