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IRF530 Power MOSFET

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Description

IRF530 Power MOSFET IRF530 is a third generation Power MOSFETs and they provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 Watt. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. Features of IRF530 Power MOSFET Dynamic dV/dt Rating Repetitive Avalanche Rated 175 °C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements Compliant to RoHS Directive 2002/95/EC Maximum Ratings of IRF530 Power MOSFET Drain Source Voltage: 100 Volts Continuous Drain Current: 14 A Pulsed Drain Current 56 A

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