Description

2N2907 PNP Silicon Transistor 2N2906 and 2N2907 series types are silicon PNP Epitaxial Planar transistors designed for small signal, general purpose switching applications. Features of 2N2907 PNP Silicon Transistor Collector-Base Voltage VCBO 60V Collector-Emitter Voltage VCEO 40V Emitter-Base Voltage VEBO 5.0 V Continuous Collector Current iC 600 mA Power Dissipation PD 400 mW Power Dissipation (TC=25°C) PD 1.8 W Operating and Storage Junction Temperature TJ, Tstg -65 to +200 °C Thermal Resistance ΘJA 438 °C/W