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'650v mosfet'
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INTEGRATED CIRCUIT rominent & Leading Wholesale Trader from Mumbai, we offer MOSFET Transistors - IRF Series, Mosfet/Integrated Circuit (IC), POWER INTEGRATIONS LNK304PN, TNY268PN POWER INTEGRATIONS, LED Driver IC (BPS-Bright Power Semiconductor) and SIC9753 DIP-7 IC LED Driver IC. Request Callback MOSFET Transistors - IRF Series IRF150 38A 100V N-Channel Power MOSFET IRF250 30A 200V N-Channel Power MOSFET IRF350 14A 400V N-Channel Power MOSFET IRF510 5.6A 100V N-Channel Power MOSFET IRF520 10A 100V N-Channel Power MOSFET IRF530 14A 100V N-Channel Power MOSFET IRF540 30A 100V N-Channel Power MOSFET IRF610 3.3A 200V N-Channel Power MOSFET IRF620 6A 200V N-Channel Power MOSFET IRF630 9A 200V N-Channel Power MOSFET IRF634 8.1A 250V N-Channel Power MOSFET IRF640 18A 200V N-Channel Power MOSFET IRF644 14A 250V N-Channel Power MOSFET IRF720 3.3A 400V N-Channel Power MOSFET IRF730 5.5A 400V N-Channel Power MOSFET IRF740 10A 400V N-Channel Power MOSFET IRF820 2.5A 500V N-Channel Power MOSFET IRF830 4.5A 500V N-Channel Power MOSFET IRF840 8A 500V N-Channel Power MOSFET IRF1010N 85A 55V N-Channel Power MOSFET IRF1404 202A 40V N-Channel Power MOSFET IRF1405 169A 55V N-Channel Power MOSFET IRF3205 110A 55V N-Channel Power MOSFET IRF3315 27A 150V N-Channel Power MOSFET IRF3415 43A 150V N-Channel Power MOSFET IRF3710 57A 100V N-Channel Power MOSFET IRF4905 74A 55V P-Channel Power MOSFET IRF5210 40A 100V P-Channel Power MOSFET IRF5305 31A 55V P-Channel Power MOSFET IRF9520 6.8A 100V P-Channel Power MOSFET IRF9530 12A 100V P-Channel Power MOSFET IRF9531 12A 60V P-Channel Power MOSFET IRF9532 10A 100V P-Channel Power MOSFET IRF9533 10A 60V P-Channel Power MOSFET IRF9540 23A 100V P-Channel Power MOSFET IRF9610 1.8A 200V P-Channel Power MOSFET IRF9630 6.5A 200V P-Channel Power MOSFET IRF9640 11A 200V P-Channel Power MOSFET IRF9Z34N 19A 55V P-Channel Power MOSFET IRFBG30 3.1A 1000V N-Channel Power MOSFET IRFD014 1.7A 60V N-Channel Power MOSFET IRFD024 2.5A 60V N-Channel Power MOSFET IRFD110 1A 100V N-Channel Power MOSFET IRFD120 1.3A 100V N-Channel Power MOSFET IRFD9014 1.1A 60V P-Channel Power MOSFET IRFD9024 1.6A 60V P-Channel Power MOSFET IRFD9120 1A 100V P-Channel Power MOSFET IRFP140 33A 100V N-Channel Power MOSFET IRFP150 42A 100V N-Channel Power MOSFET IRFP240 20A 200V N-Channel Power MOSFET IRFP250 33A 200V N-Channel Power MOSFET IRFP254 23A 250V N-Channel Power MOSFET IRFP260 50A 200V N-Channel Power MOSFET IRFP350 16A 400V N-Channel Power MOSFET IRFP450 14A 500V N-Channel Power MOSFET IRFP460 20A 500V N-Channel Power MOSFET IRFP9240 12A 200V P-Channel Power MOSFET IRFZ14 10A 60V N-Channel Power MOSFET IRFZ24N 17A 55V N-Channel Power MOSFET IRFZ34 26A 55V N-Channel Power MOSFET IRFZ44 49A 55V N-Channel Power MOSFET IRFZ46 50A 50V N-Channel Power MOSFET IRFZ48 50A 60V N-Channel Power MOSFET IRL520 10A 100V N-Channel Power MOSFET IRL540 36A 100V N-Channel Power MOSFET
Toshiba TK10A80W Mosfet Toshiba Gen-4 Super-Junction DTMOSIV MOSFETs use the state-of-the-art single epitaxial process DTMOSIV, which provides a 30% reduction in RDS(on), a figure of merit (FOM) for MOSFETs, compared to its predecessor, DTMOSIII. With a reduction in the RDS(on) it makes it possible to house lower RDS(on)chips in the same packages. This helps to improve the efficiency and reduce the size of power supplies. These devices are ideal for use with switching regulators. Now Available: 800V DTMOSIV MOSFETs Features Low drain-source on-resistance Easy to control Gate switching Enhancement mode: Vth = 2.7 to 3.7V 30% reduction in RDSon*A compared to previous generation Improved figure of merit (FOM) compared to DTMOS III generation Reduction in Coss Application of latest process technology: single epitaxial process Wide range of on-resistances and packaging options 45% reduction of Qgd (gate drain charge) at X-Series Applications Switched Mode Power Supply (SMPS) Lighting Power Factor Control (PFC) Industrial Applications (including UPS) for more information contact to me. +91 9322581894
IRFB4110PbF Power MOSFET IRFB4110PbF Power MOSFET Features of IRFB4110PbF Power MOSFET Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche SOA Enhanced body diode dV/dt and dI/dt Capability Lead Free RoHS Compliant, Halogen-Free ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 180 A ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 130 A ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 120 A IDM Pulsed Drain Current 670 A PD @TC = 25°C Maximum Power Dissipation 370 W Linear Derating Factor 2.5 W/°C VGS Gate-to-Source Voltage -+20 V dv/dt Peak Diode Recovery 5.3 V/ns Applications of IRFB4110PbF Power MOSFET High Efficiency Synchronous Rectification inc Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits Offered by Diode House
TK17A80W Mosfet Toshiba 17A 800V
TK17A80W Toshiba Mosfet Ready Stock Diode House www.diodehouse.com www.diodehouse.com
STP55NF06 MOSFET Mounting Style: Through Hole Package/Case: TO-220-3 Number of Channels: 1 Channel Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 60 V Id - Continuous Drain Current: 50 A Rds On - Drain-Source Resistance: 18 mOhms Vgs th - Gate-Source Threshold Voltage: 2 V Vgs - Gate-Source Voltage: 10 V Minimum Operating Temperature: - 55 C Maximum Operating Temperature: + 175 C
STP90NF03L - N-Channel 30V - 0.0056Ohm - 90A - TO-220 MOSFET Package/Case: TO-220-3 Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 30 V Id - Continuous Drain Current: 90 A Rds On - Drain-Source Resistance: 6.5 mOhms Vgs - Gate-Source Voltage: 20 V Minimum Operating Temperature: - 65 C Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 150 W
IRF630N - Infineon Technologies International Rectifier MOSFET MOSFET N-CH 200V 9.3A TO-220AB
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