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ITA07N80A Mosfet INR 0 INR 0
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ITA07N80A Mosfet

ITA07N80A Mosfet

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ABS210 BRIDGE DIODE INR 0 INR 0
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ABS210 BRIDGE DIODE

ABS210 BRIDGE DIODE

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ELECTROLYTIC CAPACITOR 220UF, 10V, THT, Ф6.3X12MM INR 0 INR 0
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ELECTROLYTIC CAPACITOR 220UF, 10V, THT, Ф6.3X12MM

ELECTROLYTIC CAPACITOR 220UF, 10V, THT, Ф6.3X12MM Electrolytic capacitor voltage rating - 10 V; capacitance - 220 uF; operating temperature - 105 °C; capacitance tolerance - ±20 %; dimensions - Ф6.3 x 12 mm. Electrolytic Capacitor with voltage 10 V, capacitance 220 uF and dimensions Ф6.3 x 12 mm. Sancon Electrolytic Capacitor Distributors In India Diode House

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ITA07N80A MOSFET INR 0 INR 0
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ITA07N80A MOSFET

N-Channel MOSFET Applications: • Adaptor • LCD Panel Power Features: • Lead Free • Low ON Resistance • Low Gate Charge • Low Crss(typical 13pF) • Improved dv/dt capability Ordering Information ITP07N80A ITA07N80A VDSS RDS(ON) (Max.) ID 800V 1.6 : 7.0A D G D G S S TO-220 Not to Scale Absolute Maximum Ratings TC=25 oC unless otherwise specified TO-220F Not to Scale S Symbol Parameter ITP07N80A ITA07N80A Units VDSS Drain-to-Source Voltage (NOTE *1) 800 V ID Continuous Drain Current 7.0 7.0* A ID@ 100 oC Continuous Drain Current Figure 3 IDM Pulsed Drain Current, VGS@ 10V (NOTE *2) Figure 6 PD Power Dissipation 150 40 W Derating Factor above 25 oC 1.2 0.32 W/ oC VGS Gate-to-Source Voltage ± 30 V EAS Single Pulse Avalanche Engergy L=10 mH 130 mJ IAS Pulsed Avalanche Rating Figure 8 dv/dt Peak Diode Recovery dv/dt (NOTE *3) 5.0 V/ns TL TPKG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10 seconds Package Body for 10 seconds 300 260 oC TJ and TSTG Operating Junction and Storage Temperature Range -55 to 150 *Drain Current limited by Maximum Junction Temperature. Caution: Stresses greater than those listed in the “Absolute Maximum Ratings” Table may cause permanent damage to the device. Thermal Resistance Symbol Parameter ITP07N80A ITA07N80A Units Test Conditions RTJC Junction-to-Case 0.83 3.125 o C/W Water cooled heatsink, PD adjusted for a peak junction temperature of +150 oC. RTJA Junction-to-Ambient 62 100 1 cubic foot chamber, free air. InPower Semiconductor Co., Ltd

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IRFZ44NPbF - Infineon Technologies INR 0 INR 0
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IRFZ44NPbF - Infineon Technologies

IRFZ44NPbF - Infineon Technologies Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry  Advanced Process Technology  Ultra Low On-Resistance  Dynamic dv/dt Rating  175°C Operating Temperature  Fast Switching  Fully Avalanche Rated  Lead-Free IRFZ44NPbF - Infineon Technologies Distributors In India

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SVF8N65F SILAN MOSFET INR 0 INR 0
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SVF8N65F SILAN MOSFET

SVF18N65F SILAN MOSFET 18A, 650V MOSFET SILAN Mosfet offered by Diode House

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SVF7N80F Silan Mosfet INR 0 INR 0
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SVF7N80F Silan Mosfet

SVF7N80F Silan Mosfet 7A, 800V Mosfet Silan Offered by Diode House

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ITA04N60B IPS Mosfet INR 0 INR 0
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ITA04N60B IPS Mosfet

Model Number: ITA04N60B Brand Name: IPS Key Specifications/Special Features: P/N: ITA04N60B Spec: 600V 4A MOSFET Rds(on)=1.9© Brand: IPS Packing: TO-220F SPQ: 1,000pcs N-channel MOSFET Applications: Adapter TV main power SMPS power supply LCD panel power Features: Compliant with RoHS Directive Low on resistance Low gate charge ESD improved capability InPower Semiconductor Co, Ltd. Distributors in India Diode House Mumbai

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